عنوان مقاله [English]
نویسندگان [English]چکیده [English]
In this research, Indium Tin Oxide (ITO) thin films have been deposited with the rate of 0.10 nm/s and thicknesses of about 50, 100, 170 and 250 nm by electron beam method on glass substrates. During deposition the substrates temperatures were kept constant at 400 ̊C. X-ray Diffraction (XRD), X-ray Reflectivity (XRR) techniques are used to for thin films structural analysis ITO thin films. Their optical properties were analyzed using the spectroscopy of UV-Vis )310-800 nm(. Also Elemental analysis of matter was carried out with Energy dispersive X-ray analysis (EDS) system. MATLAB, GENX and XPOWDER softwares were used to data analysis. Then, real thickness (nm), mean electron density (e/Å3) and the roughness (nm) of ITO thin films were determined. For thicknesses 50, 100, 170 and 250 nm band gaps were determined 3.47, 3.58, 3.71 and 3.87 eV respectively. The results show that by increasing in thin films thickness, the mean particles sizes have been grown, optical transmittance, absorbance and band gap are decreased, increased and increased respectively.