عنوان مقاله [English]
نویسندگان [English]چکیده [English]
In this paper, the current-voltage characteristic of a 2π domain wall formed between two semiconducting magnetic nanowires of -type material with very high spin polarization at a given temperature has been investigated. In this regard, the transmission and reflection probabilities of the carriers from the 2π wall have been obtained by solving the coupled Schrödinger equations for the up and the down spin components of the wave function, and accordingly then the charge and spin current density has been calculated. In the study of spin-diode behavior of the domain wall, it has been shown that the threshold voltage of the diode increases with the domain wall width. Also, the nonlinear dependence of the spin polarization on the applied voltage has been determined for a spin transistor application.
 M.N. Baibich, J.M. Bruto, A. Fert, F. Nguyen Van Dau, F. Petroff, P. Eitenne, G. Creuzet, A. Friederich, J. Chazelas, Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices, Physical Review Letters 61 (1988) 2472–2475.
 G. Binasch, P. Grünberg, F. Saurenbach, W. Zinn, Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange, Physical Review B 39 (1989) 4828–4830.
 M. Julliere, Tunneling between ferromagnetic films, Physics letters A 54 (1975) 225–226.
 T. Miyazaki, N. Tezuka, Giant magnetic tunneling effect in Fe/Al2O3/Fe junction, Journal of Magnetism and Magnetic Materials 139 (1995) L231–L234.
 J.S. Moodera, L.R. Kinder, T.M. Wong, R. Meservey, Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions, Physical Review Letters 74 (1995) 3273–3276.
 W. Black, B. Das, Programmable logic using giant-magnetoresistance and spin-dependent tunneling devices, Journal of Applied Physics 87 (2000) 6674–6679.
 S.S.P. Parkin, Shiftable magnetic shift register and method of using the same, U.S. Patent No. 6834005 (2004).
 S. Parkin, S. Yang, Memory on the racetrack, Nature Nanotechnology 10 (2015) 195–198.
 J. Akerman, Toward a universal memory, Science 308 (2005) 508–510.
 J. Chen, W. Chao, Q.W. Shi, Spintronic logic circuit design for nanoscale computation, IEEE Proceedings, Electronics, Circuits and Systems 13-15 (2004) 195–198.
 C. Chappert, A. Fert, F. Nguyen Van Dau, The emergence of spin electronics in data storage, Nature Materials 6 (2007) 813–823.
 D. Chiba, Y. Sato, T. Kita, F. Matsukura, H. Ohno, Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As /GaAs/(Ga,Mn)As tunnel junction. Physical Review Letters 93 (2004) 216602.
 M. Elsen, Spin transfer experiments on (Ga, Mn)As/(In,Ga)As/(Ga,Mn)As tunnel junctions, Physical Review B 73 (2006) 035303.
 V.K. Dugaev, J. Berakdar, J. Barnaś, Reflection of electrons from a domain wall in magnetic nanojunctions, Physical Review B 68 (2003) 104434.
 R.F. Sabirianov, A.K. Solanki, J.D. Burton, S.S. Jaswal, E.Y. Tsymbal, Domain-wall magnetoresistance of Co nanowires, Physical Review B 72 (2005) 054443.
 R. Sykora, I. Turek, Transmission and reflection of spin-polarized electrons propagating through a model domain wall, ACTA Physica Polonica A 113 (2008) 15–18.
 M. Czerner, B. Yavorsky, I. Mertig, The role of noncollinear magnetic order and magnetic anisotropy for the transport properties through nanowires, Physica Status Solidi B 247 (2010) 2594–2602.
 M.E. Flatté, G. Vignale, Unipolar spin diodes and transistors, Applied Physics Letters 78 (2001) 1273–1275.
 G. Vignale, M.E. Flatté, Nonlinear spin-polarized transport through a ferromagnetic domain wall, Physical Review Letters 89 (2002) 098302.
 M. Deutsch, G. Vignale, M.E. Flatté, Effect of electrical bias on spin transport across a magnetic domain wall, Journal of Applied Physics 96 (2004) 7424–7427.
 E.A. Golovatski, M.E. Flatté, Spin torque and charge resistance of ferromagnetic semiconductor 2π and π domain walls, Physical Review B 84 (2011) 115210.
 K.J. O’Shea, K. Rode, H. Kurt, D. McGrouther, D.A. MacLaren, Concentric 360° domain wall nesting in magnetic tunnel junction films: a Lorentz TEM study, Journal of Physics D: Applied Physics 48 (2015) 055001.
 Y. Jang, S.R. Bowden, M. Mascaro, J. Unguris, C.A. Ross, Formation and structure of 360 and 540 degree domain walls in thin magnetic stripes, Applied Physics Letters 100 (2012) 062407.
 I. Garate, A.H. MacDonald, Influence of a transport current on magnetic anisotropy in gyrotropic ferromagnets, Physical Review B 80 (2009) 134403.
 H. Ohno, Properties of ferromagnetic III–V semiconductors, Journal of Magnetism and Magnetic Materials 200 (1999) 110–129.
 V. Fallahi, R. Safaei, Voltage drop due to longitudinal spin accumulation across the ballistic domain wall, Physical Review B 94 (2016) 064426.