The structural, electronic and magnetic properties of Zn1-xMnxO dilute magnetic semiconductor (DMS) were studied by the full potential-linear augmented plane wave (FP-LAPW), and for the exchange correlation potential, Generalized Gradient approximation (GGA) was used. The study was done in the framework of the density functional theory (DFT) by implementing the Wien2k code. The density of states showed spin polarization in Fermi level by substitution of Mn atom in the ZnO compound. The values of spin polarization depend on the crystallography structure of Zinc Oxide. Also, the magnetic moment and the exchange splitting energy demonstrated different values for each structure.
Babaeipour, M., & Imanian, F. (2012). Electronic and magnetic properties of diluted magnetic semiconductor thin films Zn1-xMnxO. Journal of Research on Many-body Systems, 2(3), 21-27.
MLA
Manouchehr Babaeipour; Fariba Imanian. "Electronic and magnetic properties of diluted magnetic semiconductor thin films Zn1-xMnxO". Journal of Research on Many-body Systems, 2, 3, 2012, 21-27.
HARVARD
Babaeipour, M., Imanian, F. (2012). 'Electronic and magnetic properties of diluted magnetic semiconductor thin films Zn1-xMnxO', Journal of Research on Many-body Systems, 2(3), pp. 21-27.
VANCOUVER
Babaeipour, M., Imanian, F. Electronic and magnetic properties of diluted magnetic semiconductor thin films Zn1-xMnxO. Journal of Research on Many-body Systems, 2012; 2(3): 21-27.
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