In this paper, in the framework of ballistic deposition model we simulate a thin film growth in the presence of two kinds of particles: an impurity particle (C) and an active particle (A).We calculate the roughness exponent and growth exponent of our model and compare them with the results of Kardar-Parisi-Zhang (KPZ) universality class. We find a critical probability (pc) in a way that for values smaller than pc, our model belongs to KPZ universality class, while for values greater than pc it does not belong to KPZ universality class.
Emamipour, H. and Niknejhad, M. (2013). Simulation of a thin film growth in the presence of active and impurity particles. Journal of Research on Many-body Systems, 3(5), 1-8.
MLA
Emamipour, H. , and Niknejhad, M. . "Simulation of a thin film growth in the presence of active and impurity particles", Journal of Research on Many-body Systems, 3, 5, 2013, 1-8.
HARVARD
Emamipour, H., Niknejhad, M. (2013). 'Simulation of a thin film growth in the presence of active and impurity particles', Journal of Research on Many-body Systems, 3(5), pp. 1-8.
CHICAGO
H. Emamipour and M. Niknejhad, "Simulation of a thin film growth in the presence of active and impurity particles," Journal of Research on Many-body Systems, 3 5 (2013): 1-8,
VANCOUVER
Emamipour, H., Niknejhad, M. Simulation of a thin film growth in the presence of active and impurity particles. Journal of Research on Many-body Systems, 2013; 3(5): 1-8.