Simulation of a thin film growth in the presence of active and impurity particles

Document Type : Full length research Paper

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Abstract

In this paper, in the framework of ballistic deposition model we simulate a thin film growth in the presence of two kinds of particles: an impurity particle (C) and an active particle (A).We calculate the roughness exponent and growth exponent of our model and compare them with the results of Kardar-Parisi-Zhang (KPZ) universality class. We find a critical probability (pc) in a way that for values smaller than pc, our model belongs to KPZ universality class, while for values greater than pc it does not belong to KPZ universality class.

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