نوع مقاله : ویژه نامه
نویسندگان
1 دانشکده فیزیک دانشگاه صنعتی اصفهان
2 دانشگاه صنعتی اصفهان
چکیده
کلیدواژهها
عنوان مقاله [English]
نویسنده [English]
In this paper, we simulate a resonant tunneling diode (RTD). Using Green's function method for the tight-binding approximation, we calculate local density of states and current-voltage characteristic by the Green function components of the system. Results show a non-Ohmic behavior and negative differential resistance in RTD. As a result of a longitudinal electric field, the local density of states varies by changing the applied potential. Moreover, we study the effect of changing the physical parameters on the current of the device. Entering quantum dots in the middle of device causes a negative differential resistance, which is a consequence of resonant tunneling phenomenon.
کلیدواژهها [English]
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