Investigation on the Optical Properties of Polarized Bound-to-Continuum Intrsubband Transition for InAs/GaAs Quantum Dots: Electric and Magnetic Field Effects

Document Type : Full length research Paper

Abstract

Abstract: In this paper, the impact of electric and magnetic field effects on the electronic, linear and nonlinear optical properties of bound to continuum states transitions are investigated in a system of InAs/GaAs conical shaped quantum dot. The electronic structure, containing two main states of S and wetting layer states (WL), was calculated by solving one electronic band Hamiltonian with effective-mass approximation. In order to predict the optical properties of this model, transition dipole moment (TDM) for bound-to-continuum (P-to-WL) transition were studied. The results reveal that with increasing the electric and magnetic fields strength, the absorption and refractive index coefficients’ peaks increase. The physical reasons behind these interesting phenomena were also explained based on the electronic features of the z-polarized intersubband transition.

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