Investigation of the layer deposition time effects on physical properties of thin layers N:ZnO

Parhizgar, Sara Sadat; Morovati, Fatemeh

doi:10.22055/jrmbs.2019.14585

Investigation of the layer deposition time effects on physical properties of thin layers N:ZnO

Document Type : Full length research Paper

Authors

¹ Nanolab1, Plasma Physics Center,Science and Research Branch, Islamic Azad University

² Nanolab1, Plasma Physics Center,Science and Research Branch, Islamic Azad University,Tehran, Iran

10.22055/jrmbs.2019.14585

Abstract

The thin films of N: ZnO are deposited on the glass substrate by the DC magnetron sputtering in 10-2 Torr pressure in equal amount of Ar and N2 as sputtering gas. Thickness, morphology, crystalline structure and optical properties of layers were detected in three different sputtering time depositions. By increasing the time deposition, the thickness of the layers, the roughness of the surfaces and the height of the grains increase. The hexagonal (wurtzite) N:ZnO structure layers have grown with high (002) textured structure. In the N:ZnO, the lattice parameter, c, increases compare to pure ZnO. These layers have an optical gap about 3.2 eV which increased with thickness increasing this result was confirmed by photoluminescence spectra. The Raman spectrum confirmed the XRD results and the doping of nitrogen into the crystal structure of zinc oxide. The thickness of the layers was calculated by the Swanepoel method, which was close to the thickness measurement.

Keywords

References

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Journal of Research on Many-body Systems

Investigation of the layer deposition time effects on physical properties of thin layers N:ZnO

References

[2] J. Luo, A. Quan, Z. Zheng, G. Liang, F. Li, A. Zhong, H. Ma, X. Zhang, P. Fan , Study on the growth of Al-doped ZnO thin films with (1120) and (0002) preferential orientations and their thermoelectric characteristics, RSC Advances 8 (2018) 6063-6068.

[3] A. Sanchez-Juarez, A. Tiburcio-Silver, A. Ortiz, Properties of fluorine-doped ZnO deposited onto glass by spray pyrolysis, Solar Energy Materials and Solar Cells 52 (1998) 301-311.

[8] V. Craciun, J. Elders, J.G.E. Gardeniers, J. Geretovsky, I.W. Boyd, Growth of ZnO thin films on GaAs by pulsed laser deposition, Thin Solid Films 259 (1995) 1-4.

[9] M. Ohyama, H. Kozuka, T. Yoko, Sol-gel preparation of ZnO films with extremely preferred orientation along (002) plane from zinc acetate solution, Thin Solid Films 306 (1997) 78-85.

[11] F. Paraguay, J. Morales, W. Estrada, E. Andrade, M.M. Yoshida, Influence of Al, In, Cu, Fe and Sn dopants in the microstructure of zinc oxide thin films obtained by spray pyrolysis, Thin Solid Films 366 (2000) 16-27.

[22] M.C. Tarun, M.Z. Iqba, M.D. McCluskey, Nitrogen is a deep acceptor in ZnO, AIP Advances 1 (2011) 022105 (1-7).

[26] J. B. Wang, H.M. Zhong, Z.F. Li, W. Lu, Raman study of N+-implanted ZnO, Applied Physics Letters 88 (2006) 101913 (1-5).

[29] J.L. Lyons, A. Janotti, C.G. Van de Walle, Why nitrogen cannot lead to p-type conductivity in ZnO, Applied Physics Letters 95 (2009) 252105 (1-3).

Volume 9, Issue 1
فصل بهار
May 2019
Pages 33-39

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Investigation of the layer deposition time effects on physical properties of thin layers N:ZnO

References

[2] J. Luo, A. Quan, Z. Zheng, G. Liang, F. Li, A. Zhong, H. Ma, X. Zhang, P. Fan , Study on the growth of Al-doped ZnO thin films with (1120) and (0002) preferential orientations and their thermoelectric characteristics, RSC Advances 8 (2018) 6063-6068.

[3] A. Sanchez-Juarez, A. Tiburcio-Silver, A. Ortiz, Properties of fluorine-doped ZnO deposited onto glass by spray pyrolysis, Solar Energy Materials and Solar Cells 52 (1998) 301-311.

[8] V. Craciun, J. Elders, J.G.E. Gardeniers, J. Geretovsky, I.W. Boyd, Growth of ZnO thin films on GaAs by pulsed laser deposition, Thin Solid Films 259 (1995) 1-4.

[9] M. Ohyama, H. Kozuka, T. Yoko, Sol-gel preparation of ZnO films with extremely preferred orientation along (002) plane from zinc acetate solution, Thin Solid Films 306 (1997) 78-85.

[11] F. Paraguay, J. Morales, W. Estrada, E. Andrade, M.M. Yoshida, Influence of Al, In, Cu, Fe and Sn dopants in the microstructure of zinc oxide thin films obtained by spray pyrolysis, Thin Solid Films 366 (2000) 16-27.

[22] M.C. Tarun, M.Z. Iqba, M.D. McCluskey, Nitrogen is a deep acceptor in ZnO, AIP Advances 1 (2011) 022105 (1-7).

[26] J. B. Wang, H.M. Zhong, Z.F. Li, W. Lu, Raman study of N+-implanted ZnO, Applied Physics Letters 88 (2006) 101913 (1-5).

[29] J.L. Lyons, A. Janotti, C.G. Van de Walle, Why nitrogen cannot lead to p-type conductivity in ZnO, Applied Physics Letters 95 (2009) 252105 (1-3).

Volume 9, Issue 1فصل بهارMay 2019Pages 33-39

Files

History

Share

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Statistics

Volume 9, Issue 1
فصل بهار
May 2019
Pages 33-39