[1] M. Ferhat, A. Zaoui, Structural and electronic properties of III-V bismuth compounds, Physical Review B 73 11 (2006)115107.
[2] A. Janotti, S.H. Wie, S. Zhang, Theoretical study of the effects of isovalentcoalloying of Bi and N in GaAs, Physical Review B 65 11 (2002) 115203.
[3] D. Madouri, A. Boukra, A. Zaoui, M. Ferhat, Bismuth alloying in GaAs: a first-principles study, Computational Materials Science 43 (2008) 818-822.
[4] A. Belabbes, A. Zaoui, M. Ferhat, Lattice dynamics study of bismuth III–V compounds, Journal of Physics: Condensed Matter 20 (2008) 415221.
[5] H. Salehi, H. Badehian, M. Farbod, First principle study of the physical properties of semiconducting binary antimonide compounds under hydrostatic pressures, Materials Science in Semiconductor Processing 26 (2014) 477-490.
[6] S. Francoeur, M.J. Seong, A. Mascarenhas, S. Tixier, M. Adamcyk and T. Tiedje, Band gap of GaAs1-x Bix, Applied Physics Letters 82 22 (2003) 3874-3876 .
[7] S.Q. Wang, H.Q. Ye, Plane-wave pseudopotential study on mechanical and electronic properties for IV and III-V crystalline phases with zinc-blende structure, Physical Review B 66 (2002) 235111.
[8] M. Born, R.J. Oppenheimer, Max Born and his legacy to condensed matter physics, Annals of Physics 84 (1927)547-484.