Considering Effects of Presence of Staggered and Gate Potential on Transport in Bernal Stacked ABA Trilayer Graphene

Document Type : Full length research Paper

Authors

1 Department of Physics, Faculty of Science, Islamic azad university, Hamedan Branch, Hamedan, Iran

2 Department of physics, Faculty of science , Lorestan University, Khoramaabad, Lorestan, Iran

3 Department of physics, Faculty of Science , Lorestan University, Khorramabad, Lorestan,Iran

Abstract

Graphene is a two-dimensional carbon-arranged structure in the hexagonal lattice, each cell of which is non- Bravais and consists of two A, B substructures of atoms that can be maintained in ( of one to several layers maximum of its) two-dimensional properties. Trilayer graphene has been studied due to its stability and abundance over other structures.
Considering the type and number of layers and how are placed in relation to each other in the properties of the material, causing a different dispersion spectrum, we will see different transport properties in the structures.
Thus, in the study of trilayer graphene, the three distinct layers of AAA, the ABA and the ABC–stackeds were introduced and then analyzed by the Hamiltonian analysis and the Bernal strip structure.
Investigations have been carried out once in normal and again in the presence of two types of potential, because in the analysis of electrical transport we consider a piece of three-layer graphene in the presence of a potential sandwiched between two normal these are without potential.
The electrical transport properties by analyzing the flow diagram, derived from the Landaure-Buttiker approach, indicate that the use of trilayer graphene in the production and construction of transistors.

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References

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Journal of Research on Many-body Systems
Volume 9, Issue 4 - Serial Number 23
February 2020
Pages 43-55

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History

  • Receive Date: 06 August 2018
  • Revise Date: 29 August 2019
  • Accept Date: 04 November 2019

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