Electronic transport properties of doped graphene-like borophene by ab initio calculations

Document Type : Full length research Paper

Authors

1 Department of Physics, Islamshahr Branch, Islamic Azad University, Islamshahr, Iran

2 Department of Electrical Engineering, Islamshahr Branch, Islamic Azad University, Islamshahr, Iran

Abstract

Abstract
In this paper, the electronic transport properties of graphene-like borophene as well as its doped structures with boron, carbon and nitrogen atoms are investigated using the density functional theory. Total and partial density of states, band structure, charge density, quantum conductance and current-voltage characteristic of these structures have been studied and compared. The results indicate that graphene-like borophene is a metal, and has a Dirac point with a linear dispersion relation similar graphene. Our investigations demonstrate that the Dirac point is in upper place than the Fermi level, and the doping can affect the location of Dirac point. Moreover, the current-voltage characteristics show Ohmic behavior of these structures. In doped graphene-like borophene structures, boron atoms are formed ionic bonds. In all considered structures, the current density along zigzag and armchair directions exhibit an anisotropic behavior. By 90° rotation of graphene-like borophene sheet with carbon atom, its current is controlled and this material can be used to design nanoelectronic switches. The current control with C atom doping can be used in this two-dimensional material to design nanoelectronic switches.

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References

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History

  • Receive Date: 14 July 2019
  • Revise Date: 17 March 2021
  • Accept Date: 26 April 2021

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