Journal of Research on Many-body Systems

Journal of Research on Many-body Systems

Effects of Interdiffusion and Temperature on Optoelectronic Properties of In(1-x)Ga(x)As/InAs/In(1-y)Al(y)As Quantum Well

Document Type : Full length research Paper

Authors
leila mojaradgharabagh 1
vigen aziz aghchegala 2
1 Department of Physics, Urmia University of Technology,Urmia, , Iran
2 Department of Physics, Faculty of ScienceUrmia University of Technology,Urmia , Iran
10.22055/jrmbs.2022.17412
Abstract
The effect of interdiffusion of ,  and  atoms on potential profile, energy levels and ground state probability density of electron in  quantum well is investigatend for small values of diffusion length in the framework of first order perturbation theory. It is shown that interdiffusion leads to an asymmetric profile for the potential and to the rise up of energy levels and to the increase of localization degree of the probabilitily density with a small shift across the growth axis. The spontaneous effects of interdiffusion and temperature on chemical potential energy and the intersubband absorption coefficient is investigated in the mentioned structure as well. It is shown that for a given value of diffusion length, the chemical potential decreases with the increase of temperature, and also for a given value of temperature the chemical potential increases with the increase of diffusion length. It is also shown that the increase of diffusion length leads to a considerable decrease in intersubband absorption coefficient and to the blue shift of its spectrum.
Keywords
Quantum Well
Interdiffusion
temperature
chemical potansiol
intersubband absorption coeficient
Subjects
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Journal of Research on Many-body Systems
Volume 12, Issue 1 - Serial Number 32
spring 2022
Spring 2022
Pages 89-100

  • Receive Date 20 October 2019
  • Revise Date 16 July 2021
  • Accept Date 27 February 2022