شبیه‌سازی و بررسی سلول خورشیدی CIGS سازگار با محیط زیست

نوع مقاله : مقاله پژوهشی کامل

نویسندگان

1 گروه مهندسی مواد، دانشکده فنی و مهندسی، دانشگاه بین المللی امام خمینی (ره)، قزوین، ایران

2 گروه مهندسی مواد، دانشکده فنی و مهندسی، دانشگاه بین‌المللی امام خمینی (ره)، قزوین، ایران

چکیده

در این مطالعه، سلول خورشیدی CIGS با ساختارMo/CuIn0.7Ga0.3Se2(CIGS) /CdS/ZnO/Al-Doped ZnO  توسط نرم افزار Atlas silvaco-TCAD شبیه‌سازی شد. ویژگی‌های فتوولتائیک سلول خورشیدی با استفاده از لایه‌های بافر CdS و ZnSe محاسبه و مقایسه شد. سپس ویژگی‌های فتوولتائیک با ضخامت‌های مختلف لایة بافر ZnSe مورد بررسی قرار گرفت. ضخامت 25 نانومتر به‌عنوان ضخامت بهینه انتخاب شد. پس از بهینه‌سازی ضخامت لایه ZnSe، ویژگی‌های فتوولتائیک سلول خورشیدی با تغییر اختلاف نوار هدایت (CBO) مورد ارزیابی قرار گرفت. بالاترین راندمان تبدیل سلول خورشیدی CIGS در محدوده از eV5/0- تا eV5/0+ برای CBO به‌دست آمد. در نهایت، به‌دلیل شفافیت نوری بالا، تحرک حامل بالا و خواص مکانیکی مناسب، گرافن با Al-doped ZnO (AZO) جایگزین شد. گرافن به‌صورت تک لایه و چند لایه به‌عنوان لایة اکسید رسانای شفاف (TCO) استفاده شد. شبیه‌سازی‌ها بیشترین بازده را برای ساختار سلول خورشیدی بر اساس
single layer graphene Mo/CIGS/ZnSe/i-ZnO/ و پارامترهای فتوولتائیک mA/cm2 64/38=Jsc ، V 67/0Voc=، %33/79=FF و 71/20η= درصد پیش بینی کردند.

کلیدواژه‌ها

موضوعات


عنوان مقاله [English]

Simulation and investigation of environmentally friendly CIGS solar cell

نویسندگان [English]

  • Fatemeh Vahidian 1
  • Saeid Baghshahi 2
1 Department of Materials Engineering, School of Engineering, Imam Khomeini International University, Qazvin, Iran
2 Department of Materials Engineering, School of Engineering, Imam Khomeini International University, Qazvin, Iran
چکیده [English]

In this study, a CIGS solar cell with a Mo/Cu(In0.7Ga0.3)Se2(CIGS)/CdS/ZnO/Al-doped ZnO (AZO) structure was simulated by Atlas silvaco-TCAD software. The photovoltaic characteristics of solar cells using CdS and ZnSe buffer layers were calculated and compared. Then, the photovoltaic characteristics were examined with different thicknesses of the ZnSe buffer layer. The 25 nm thickness was selected as the optimum thickness. After optimization of the ZnSe layer thickness, the photovoltaic characteristics of solar cells were evaluated by changing the conduction band offset (CBO). The highest CIGS solar cell conversion efficiency was obtained in the range from -0.5 eV to +0.5 eV for CBO. Finally, graphene was replaced with Al-doped ZnO (AZO) due to its high optical transparency, high carrier mobility, and proper mechanical properties. Graphene was used as a monolayer and multilayer as a transparent conductive oxide (TCO) layer. Simulations predicted the highest efficiency for solar cell structure based on Mo/CIGS/ZnSe/i-ZnO/monolayer graphene and the photovoltaic parameters were Jsc=38.64 mA/cm2, Voc=0.67 V, FF=79.33% and η=20.71%.

کلیدواژه‌ها [English]

  • Silvaco
  • thin-film solar cell
  • CIGS
  • buffer layer
  • ZnSe
  • graphene
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