Electron transport in nanostructure lanthanum vanadium oxide quantum dots for solar cells

Document Type : Full length research Paper

Authors

Department of Physics, Isfahan University of Technology, Isfahan, Iran

Abstract

The incorporation of quantum dots in solar cells primarily aims to enhance efficiency by broadening the light absorption spectrum. However, this optimization necessitates careful examination of how these dots influence electronic transport. In this research, we focused on lanthanum vanadium oxide (LVO) quantum dots, chosen for their energy band gap that aligns optimally with the Shockley - Queisser limit curve for solar - to - electrical energy conversion. The Green's function approach was employed to calculate electron transport through these quantum dots, positioned as the central component between two metal conductors. Lanthanum vanadium oxide, classified as a strongly correlated material and a Mott insulator, required the application of the Hubbard model in second quantization representation for accurate system description. The Green's function was derived using both the equation of motion method and Dyson's equation. Calculations encompassed electron transmission probabilities for configurations involving two and four quantum dots. Furthermore, a key finding revealed an inverse relationship between electron - electron interaction strength and electronic transport efficiency. As interactions intensified, a decrease in electronic transport was observed. For the material under study, the optimal value of the Hubbard quantity at which electronic transport and system efficiency have their maximum value was determined.

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References

 
[1] H. Dixit, D. Punetha, S.K. Pandey, Performance investigation of Mott-insulator LaVO3 as a photovoltaic absorber material, Journal of Electronic Materials, 48 (2019) 7696-7703. https://doi.org/10.1007/s11664-019-07581-0
[2] C.M. Kropf, A. Valli, P. Franceschini, G.L. Celardo, M. Capone, C. Giannetti, F. Borgonovi, Towards high-temperature coherence-enhanced transport in heterostructures of a few atomic layers, Physical Review B, 100 (2019) 035126. https://doi.org/10.1103/PhysRevB.100.035126
[3] L. Wang, Y. Li, A. Bera, C. Ma, F. Jin, K. Yuan, W. Yin, A. David, W. Chen, W. Wu, Device performance of the mott insulator LaVO3 as a photovoltaic material, Physical Review Applied, 3 (2015) 064015. https://doi.org/10.1103/PhysRevApplied.3.064015
[4] R.T. Scalettar, An introduction to the Hubbard hamiltonian, quantum materials: experiments and theory, 6 (2016)
[5] S. Verma, A. Singh, A Strongly Correlated Quantum Dot Heat Engine with Optimal Performance: A Nonequilibrium Green's Function Approach, physica status solidi (b), 260 (2023) 2200608.https://doi.org/10.1002/pssb.202200608
[6] S. Datta, Quantum transport: atom to transistor, Cambridge university press2005
[7] M. Lavagna, V. Talbo, T. Duong, A. Crépieux, Level anticrossing effect in single-level or multilevel double quantum dots: Electrical conductance, zero-frequency charge susceptibility, and Seebeck coefficient, Physical Review B, 102 (2020) 115112.https://doi.org/10.1103/PhysRevB.102.115112
[8] H. Bruus, K. Flensberg, Many-body quantum theory in condensed matter physics: an introduction, OUP Oxford2004.
Journal of Research on Many-body Systems
Volume 14, Issue 2 - Serial Number 41
2024 summer
August 2024
Pages 49-57

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History

  • Receive Date: 29 October 2023
  • Revise Date: 04 March 2024
  • Accept Date: 20 May 2024

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