In this paper, we simulate a resonant tunneling diode (RTD). Using Green's function method for the tight-binding approximation, we calculate local density of states and current-voltage characteristic by the Green function components of the system. Results show a non-Ohmic behavior and negative differential resistance in RTD. As a result of a longitudinal electric field, the local density of states varies by changing the applied potential. Moreover, we study the effect of changing the physical parameters on the current of the device. Entering quantum dots in the middle of device causes a negative differential resistance, which is a consequence of resonant tunneling phenomenon.
Asefpour, M. (2016). Transport in quantum dots resonant tunneling diodes. Journal of Research on Many-body Systems, 6(Special Issue (2)), 21–25. https://doi.org/10.22055/jrmbs.2016.12473
MLA
Asefpour, M. "Transport in quantum dots resonant tunneling diodes", Journal of Research on Many-body Systems, 6, Special Issue (2), 2016, 21–25. doi: 10.22055/jrmbs.2016.12473
HARVARD
Asefpour, M. (2016). 'Transport in quantum dots resonant tunneling diodes', Journal of Research on Many-body Systems, 6(Special Issue (2)), pp. 21–25. doi: 10.22055/jrmbs.2016.12473
CHICAGO
Asefpour, M., "Transport in quantum dots resonant tunneling diodes." Journal of Research on Many-body Systems, 6 Special Issue (2) (2016): 21–25, doi: 10.22055/jrmbs.2016.12473
VANCOUVER
Asefpour M. Transport in quantum dots resonant tunneling diodes. J. Res. Many-Body Syst. 2016;6(Special Issue (2)):21–25 (In Persian). doi: 10.22055/jrmbs.2016.12473
