Design and Analysis of Plasmonic Switch at mid-IR Wavelengths with Graphene Nano-Ribbons

Document Type : Full length research Paper

Authors

1 Department of Electronic, Faculty of Electrical Engineering, Shahid Rajaee Teacher Training University, Tehran, Iran

2 Dept. of Electronic Eng., Faculty of Electrical Eng., Shahid Rajaee Teacher Training University, Tehran, Iran

3 Departement of Electronic, Faculty of Electrical and computer Engineering, Shahid Beheshti University, Tehran, Iran

Abstract

Taking advantage of chemical potential (μ_c) one layer and multi layers graphene nano ribbons, we designed and analyzed performance of plasmonic switches at mid-IR wavelengths. By slight varying the chemical potential of graphene, significant resonance shifts (∆λ) and modulation depth (MD) achieved. Finite element method numerical simulation show that plasmonic switch made of hexagonal boron nitride (hBN)/Graphene suffering relatively large MD and wavelength shifts with N=6, and varying μ_c from 0.3eV- 0.4eV, 14 dB and 2.8 µm, respectively. The proposed structure could be useful for research in compact and largely tunable mid-infrared photonic devices to realize on-chip CMOS optoelectronic systems.

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