بررسی اثر زمان لایه نشانی بر خواص فیزیکی لایه های نازک N:ZnO

پرهیزگار, سارا سادات; مروتی, فاطمه

doi:10.22055/jrmbs.2019.14585

بررسی اثر زمان لایه نشانی بر خواص فیزیکی لایه های نازک N:ZnO

نوع مقاله : مقاله پژوهشی کامل

نویسندگان

¹ آزمایشگاه نانو1-دانشکده پلاسما- دانشگاه آزاد واحد علوم و تحقیقات- تهران- ایران

² آزمایشگاه نانو1، پژوهشکده پلاسما، دانشگاه آزاد اسلامی واحد علوم و تحقیقات، تهران، ایران

10.22055/jrmbs.2019.14585

چکیده

در این تحقیق لایه‌های نازک N:ZnO روی زیر لایه شیشه با استفاده از کندوپاش DC در فشار کاری Torr 2-10×2 در مخلوط گازهای آرگون و نیتروژن لایه نشانی شدند. ضخامت، ریخت‌شناسی، ساختار کریستالی و خواص اپتیکی لایه‌ها در سه زمان کندوپاش مختلف شناسایی شدند. با افزایش زمان لایه نشانی، ضخامت لایه‌ها، زبری سطح و ارتفاع دانه‌ها افزایش می‌یابد. لایه‌ها دارای بافت قوی کریستالی در راستای (002) با ساختار هگزاگونال (ورتسایست) هستند. با ورود نیتروژن به درون ساختار بلوری ZnO ثابت شبکه c نسبت به حالت ZnO خالص افزایش می‌یابد. شکاف باند اپتیکی لایه‌ها نزدیک 2/ 3 الکترون ولت بدست آمد که با افزایش ضخامت افزایش یافت این نتیجه با طیف سنجی فوتولومینسانس تایید شد. طیف رامان مؤید نتایج XRD و ورود آلایش نیتروژن به درون ساختار کریستالی اکسید روی بود. ضخامت لایه‌ها با روش سوین پل محاسبه شد که نزدیک به ضخامت اندازه‌گیری شده بود.

کلیدواژه‌ها

عنوان مقاله [English]

Investigation of the layer deposition time effects on physical properties of thin layers N:ZnO

نویسندگان [English]

Sara Sadat Parhizgar ¹
Fatemeh morovati ²

¹ Nanolab1, Plasma Physics Center,Science and Research Branch, Islamic Azad University

² Nanolab1, Plasma Physics Center,Science and Research Branch, Islamic Azad University,Tehran, Iran

چکیده [English]

The thin films of N: ZnO are deposited on the glass substrate by the DC magnetron sputtering in 10-2 Torr pressure in equal amount of Ar and N2 as sputtering gas. Thickness, morphology, crystalline structure and optical properties of layers were detected in three different sputtering time depositions. By increasing the time deposition, the thickness of the layers, the roughness of the surfaces and the height of the grains increase. The hexagonal (wurtzite) N:ZnO structure layers have grown with high (002) textured structure. In the N:ZnO, the lattice parameter, c, increases compare to pure ZnO. These layers have an optical gap about 3.2 eV which increased with thickness increasing this result was confirmed by photoluminescence spectra. The Raman spectrum confirmed the XRD results and the doping of nitrogen into the crystal structure of zinc oxide. The thickness of the layers was calculated by the Swanepoel method, which was close to the thickness measurement.

کلیدواژه‌ها [English]

DC Magnetron Sputtering
Swanepoel Method
photoluminescence spectra
Raman spectra
N: ZnO

مراجع

[1] P. Nunes, B. Fernandes, E. Fortunato, P. Vilarinho, R. Martins, Performances presented by zinc oxide thin films deposited by spray pyrolysis, Thin Solid Films 337 (1999) 176-179.

[2] J. Luo, A. Quan, Z. Zheng, G. Liang, F. Li, A. Zhong, H. Ma, X. Zhang, P. Fan , Study on the growth of Al-doped ZnO thin films with (1120) and (0002) preferential orientations and their thermoelectric characteristics, RSC Advances 8 (2018) 6063-6068.

[3] A. Sanchez-Juarez, A. Tiburcio-Silver, A. Ortiz, Properties of fluorine-doped ZnO deposited onto glass by spray pyrolysis, Solar Energy Materials and Solar Cells 52 (1998) 301-311.

[4] Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S.-J. Cho, H. Morkoç, A comprehensive review of ZnO materials and devices, Journal of Applied Physics 98 4 (2005) 041301 (1-103).

[5] R.S.Gonçalves, PetrucioBarrozo, G.L.Brito, B.C.Viana, F.Cunha, The effect of thickness on optical, structural and growth mechanism of ZnO thin film prepared by magnetron sputtering, Thin Solid Films 1 (2018) 40-45

[6] V.R. Shinde, C.D. Lokhandre, R.S. Mane, S.H. Han, Hydrophobic and textured ZnO films deposited by chemical bath deposition: annealing effect, Applied Surface Science 245 (2005) 407-413.

[7] J.H. Morgan, D.E. Broide, The preparation and some properties of transparent conducting ZnO for use in solar cells, Canadian journal of physics 60 (1982) 1387-1390.

[8] V. Craciun, J. Elders, J.G.E. Gardeniers, J. Geretovsky, I.W. Boyd, Growth of ZnO thin films on GaAs by pulsed laser deposition, Thin Solid Films 259 (1995) 1-4.

[9] M. Ohyama, H. Kozuka, T. Yoko, Sol-gel preparation of ZnO films with extremely preferred orientation along (002) plane from zinc acetate solution, Thin Solid Films 306 (1997) 78-85.

[10] R. Ayouchi, D. Leinen, F. Martin, M. Gabas, E. Dalchiele, J.R. Ramos-Barrado, Preparation and characterization of transparent ZnO thin films obtained by spray pyrolysis, Thin Solid Films 426 (2003) 68-72.

[11] F. Paraguay, J. Morales, W. Estrada, E. Andrade, M.M. Yoshida, Influence of Al, In, Cu, Fe and Sn dopants in the microstructure of zinc oxide thin films obtained by spray pyrolysis, Thin Solid Films 366 (2000) 16-27.

[12] S.K. Obuliraj, K. Yamauchi, Y. Hanada, M. Miyamoto2, T. Ohba, S. Morito, Yasuhisa Fujita, Nitrogen Doped ZnO Nanomaterials for UV-LED Applications, Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems January, Bangkok, Thailand (2007) 16-19.

[13] J. Huang, S. Chu, J. Kong, L. Zhang, C.M. Schwarz, G. Wang ,L. Chernyak, Z. Chen, J. Liu, ZnO p–n Homojunction Random Laser Diode Based on Nitrogen-Doped p-type Nanowires, Advanced Optical Mater 1 (2013) 179–185.

[14] C. Gionco, D. Fabbri, P. Calza, M.C. Paganini, Synthesis, Characterization, and Photocatalytic Tests of N-Doped Zinc Oxide: A New Interesting Photocatalyst, Journal of Nanomaterials 2016 (2016) 1-7.

[15] K. Jindal, M. Tomar, R.S. Katiyar, V. Gupta, Transition from diamagnetic to ferromagnetic state in laser ablated nitrogen doped ZnO thin films, AIP Advances 5 (2015) 027117-(1-10).

[16] Y.g Jin, N. Zhang, H. Xu, and B. Zhang, Room-temperature ferromagnetism in p-type ZnO:N films prepared by oxidizing Zn3N2 in oxygen plasma, Applied Physics Letters 113 (2018) 202401(1-5).

[17] D. Aryanto, E. Hastuti, N. Husniya, T. Sudiro, B.W. Nuryadin, Synthesis, characterization, and photocatalytic properties of nanocrystalline NZO thin films, Journal of Physics: Conference Series 985 (2018) 012025.

[18] M. Chakraborty, R. Thangavel, K. Asokan, N doped ZnO and ZnO nanorods based p-n homojunction fabricated by ion Implantation, AIP Conference Proceedings, 1953 (2018) 050047.

[19] A.N. Georgobiania, A.N. Gruzintsevb, V.T. Volkovb, M.O. Vorobieva,V.I. Demina, V.A. Dravina, p-Type ZnO:N obtained by ion implantation of nitrogen with post-implantation annealing in oxygen radicals, Nuclear Instruments and Methods in Physics Research A 514 (2003) 117–121.

[20] S.S. Parhizgar, J. Beheshtian, Effect of nitrogen doping on electronic and optical properties of ZnO sheet:DFT+U study, Computational Condensed Matter 15 (2018) 1–6.

[21] B. Yao,a_ D.Z. Shen, Z.Z. Zhang, X.H. Wang, Z.P. Wei, B.H. Li, Y.M. Lv, X.W. Fan, Effects of nitrogen doping and illumination on lattice constants and conductivity behavior of zinc oxide grown by magnetron sputtering, Journal of Applied Physics 99 (2006) 123510-6.

[22] M.C. Tarun, M.Z. Iqba, M.D. McCluskey, Nitrogen is a deep acceptor in ZnO, AIP Advances 1 (2011) 022105 (1-7).

[23] R. Swanepoel, Determination of the thickness and optical constants of amorphous silicon, Journal of Physics E: Scientific Instruments 16 (1983) 1214-1222.

[24] T.C. Damen, S.P.S. Pqrtq, B. Tell , Raman Effect in Zinc Oxide, Physical Review 142 (1996) 570-575.

[25] K. Samanta, P. Bhattacharya, R.S. Katiyar, W. Iwamoto, P.G. Pagliuso, C. Rettori, Raman scattering studies in dilute magnetic semiconductor Zn1−xCoxO, Physical Review B 73 (2006) 245213 (1-5).

[26] J. B. Wang, H.M. Zhong, Z.F. Li, W. Lu, Raman study of N+-implanted ZnO, Applied Physics Letters 88 (2006) 101913 (1-5).

[27] O. Game, U. Singh, A.A. Gupta, A. Suryawanshi, A. Banpurkar, S. Ogale, Concurrent synthetic control of dopant (nitrogen) and defect complexes to realize broadband (UV–650 nm) absorption in ZnO nanorods for superior photo-electrochemical performance, Journal of Materials Chemistry 22 (2012) 17302-17310.

[28] A.K. Arora, M. Rajalakshmi, T.R. Ravindran, V. Sivasubramanian, Raman spectroscopy of optical phonon confinement in nanostructured materials, Journal of Raman Spectroscopy 38 (2007) 604–617.

[29] J.L. Lyons, A. Janotti, C.G. Van de Walle, Why nitrogen cannot lead to p-type conductivity in ZnO, Applied Physics Letters 95 (2009) 252105 (1-3).

دوره 9، شماره 1
اردیبهشت 1398
صفحه 33-39

فایل ها

XML
اصل مقاله 407 K
فایل‌های تکمیلی/اضافی
Ab5.pdf

سابقه مقاله

تاریخ دریافت: 05 مرداد 1397
تاریخ بازنگری: 29 بهمن 1397
تاریخ پذیرش: 25 اسفند 1397

تعداد مشاهده مقاله: 557
تعداد دریافت فایل اصل مقاله: 459

بررسی اثر زمان لایه نشانی بر خواص فیزیکی لایه های نازک N:ZnO

Investigation of the layer deposition time effects on physical properties of thin layers N:ZnO

مراجع

[2] J. Luo, A. Quan, Z. Zheng, G. Liang, F. Li, A. Zhong, H. Ma, X. Zhang, P. Fan , Study on the growth of Al-doped ZnO thin films with (1120) and (0002) preferential orientations and their thermoelectric characteristics, RSC Advances 8 (2018) 6063-6068.

[3] A. Sanchez-Juarez, A. Tiburcio-Silver, A. Ortiz, Properties of fluorine-doped ZnO deposited onto glass by spray pyrolysis, Solar Energy Materials and Solar Cells 52 (1998) 301-311.

[8] V. Craciun, J. Elders, J.G.E. Gardeniers, J. Geretovsky, I.W. Boyd, Growth of ZnO thin films on GaAs by pulsed laser deposition, Thin Solid Films 259 (1995) 1-4.

[9] M. Ohyama, H. Kozuka, T. Yoko, Sol-gel preparation of ZnO films with extremely preferred orientation along (002) plane from zinc acetate solution, Thin Solid Films 306 (1997) 78-85.

[11] F. Paraguay, J. Morales, W. Estrada, E. Andrade, M.M. Yoshida, Influence of Al, In, Cu, Fe and Sn dopants in the microstructure of zinc oxide thin films obtained by spray pyrolysis, Thin Solid Films 366 (2000) 16-27.

[22] M.C. Tarun, M.Z. Iqba, M.D. McCluskey, Nitrogen is a deep acceptor in ZnO, AIP Advances 1 (2011) 022105 (1-7).

[26] J. B. Wang, H.M. Zhong, Z.F. Li, W. Lu, Raman study of N+-implanted ZnO, Applied Physics Letters 88 (2006) 101913 (1-5).

[29] J.L. Lyons, A. Janotti, C.G. Van de Walle, Why nitrogen cannot lead to p-type conductivity in ZnO, Applied Physics Letters 95 (2009) 252105 (1-3).

دوره 9، شماره 1
اردیبهشت 1398
صفحه 33-39

فایل ها

سابقه مقاله

هم رسانی

ارجاع به این مقاله

آمار

بررسی اثر زمان لایه نشانی بر خواص فیزیکی لایه های نازک N:ZnO

Investigation of the layer deposition time effects on physical properties of thin layers N:ZnO

مراجع

[2] J. Luo, A. Quan, Z. Zheng, G. Liang, F. Li, A. Zhong, H. Ma, X. Zhang, P. Fan , Study on the growth of Al-doped ZnO thin films with (1120) and (0002) preferential orientations and their thermoelectric characteristics, RSC Advances 8 (2018) 6063-6068.

[3] A. Sanchez-Juarez, A. Tiburcio-Silver, A. Ortiz, Properties of fluorine-doped ZnO deposited onto glass by spray pyrolysis, Solar Energy Materials and Solar Cells 52 (1998) 301-311.

[8] V. Craciun, J. Elders, J.G.E. Gardeniers, J. Geretovsky, I.W. Boyd, Growth of ZnO thin films on GaAs by pulsed laser deposition, Thin Solid Films 259 (1995) 1-4.

[9] M. Ohyama, H. Kozuka, T. Yoko, Sol-gel preparation of ZnO films with extremely preferred orientation along (002) plane from zinc acetate solution, Thin Solid Films 306 (1997) 78-85.

[11] F. Paraguay, J. Morales, W. Estrada, E. Andrade, M.M. Yoshida, Influence of Al, In, Cu, Fe and Sn dopants in the microstructure of zinc oxide thin films obtained by spray pyrolysis, Thin Solid Films 366 (2000) 16-27.

[22] M.C. Tarun, M.Z. Iqba, M.D. McCluskey, Nitrogen is a deep acceptor in ZnO, AIP Advances 1 (2011) 022105 (1-7).

[26] J. B. Wang, H.M. Zhong, Z.F. Li, W. Lu, Raman study of N+-implanted ZnO, Applied Physics Letters 88 (2006) 101913 (1-5).

[29] J.L. Lyons, A. Janotti, C.G. Van de Walle, Why nitrogen cannot lead to p-type conductivity in ZnO, Applied Physics Letters 95 (2009) 252105 (1-3).

دوره 9، شماره 1اردیبهشت 1398صفحه 33-39

فایل ها

سابقه مقاله

هم رسانی

ارجاع به این مقاله

آمار

دوره 9، شماره 1
اردیبهشت 1398
صفحه 33-39